Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition
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Nitrogen incorporation and trace element analysis of nanocrystalline diamond thin films by secondary ion mass spectrometry
Nitrogen has been successfully incorporated into nanocrystalline diamond films produced by a CH4 /N2 microwave plasma-enhanced chemical vapor deposition method. High mass resolution secondary ion mass spectrometry ~SIMS! characterization shows that the density of the incorporated nitrogen, monitored via CN, can be as high as 10 atoms/cm, depending on the ratio of CH4 to N2 in the reactant gas a...
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We report a combined experimental and modeling study of microwave-activated dilute CH4/N2/H2 plasmas, as used for chemical vapor deposition (CVD) of diamond, under very similar conditions to previous studies of CH4/H2, CH4/H2/Ar, and N2/H2 gas mixtures. Using cavity ring-down spectroscopy, absolute column densities of CH(X, v = 0), CN(X, v = 0), and NH(X, v = 0) radicals in the hot plasma have ...
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Diamond thin films with a broad range of microstructures from a ultrananocrystalline diamond (UNCD) form developed at Argonne National Laboratory to a microcrystalline diamond (MCD) form have been grown with different hydrogen percentages in the Ar/CH4 gas mixture used in the microwave plasma enhanced chemical vapor deposition (CVD) process. The dielectric properties of the CVD diamond thin fil...
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Boron-doped diamond (BDD) thin films have recently come to be considered as being among the most ideal electrode materials for electroanalysis and electrolysis. For BDD films prepared by use of the microwave plasma-assisted chemical vapor deposition (MPCVD) method, the as-deposited surfaces are hydrogen-terminated. These surfaces, however, can be oxidized while being used as anodes, i.e., at re...
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